to-220 f plastic-encapsulate transistors tip120 f ,121 f ,122 f d arlington transistor (npn) tip125 f ,126 f ,127 f d arlington transistor (pnp) features medium power complementary s ilicon t ransistors maximum ratings (t a =25 unless otherwise noted) symbol parameter tip120 f tip125 f tip121 f tip126 f tip122 f tip127 f unit v cbo collector-base voltage 60 80 100 v v ceo collector-emitter voltage 60 80 100 v v ebo emitter-base voltage 5 v i c collector current -continuous 5 a p c collector power dissipation 2 w r ja thermal resistance , junction to ambient 62.5 /w r j c thermal resistance , junction to case 1.92 /w t j junction temperature 150 t stg storage temperature -55 ~ +150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min max unit collector-base breakdown voltag e tip120 f ,tip125 f tip121 f ,tip126 f tip122 f ,tip127 f v (br) cbo i c = 1ma,i e =0 60 80 100 v collector-emitter breakdown voltage tip120 f ,tip125 f tip121 f ,tip126 f tip122 f ,tip127 f v ceo (sus) i c = 30ma,i b =0 60 80 100 v collector cut-off current tip120 f ,tip125 f tip121 f ,tip126 f tip122 f ,tip127 f i cbo v cb = 60 v, i e =0 v cb = 80 v, i e =0 v cb = 100v, i e =0 0.2 ma collector cut-off current tip120 f ,tip125 f tip121 f ,tip126 f tip122 f ,tip127 f i ceo v ce =30 v, i b =0 v ce =40 v, i b =0 v ce =50 v, i b =0 0.5 ma emitter cut-off current i ebo v eb =5 v, i c =0 2 ma h fe(1) v ce = 3v, i c =0.5a 1000 dc current gain h fe(2) v ce = 3v, i c =3 a 1000 collector-emitter saturation voltage v ce (sat) i c =3a,i b =12ma i c =5 a,i b =20ma 2 4 v base-emitter voltage v be v ce =3v, i c =3 a 2.5 v output capacitance tip125 f ,tip126 f ,tip127 f tip120 f ,tip121 f ,tip122 f c ob v cb =10v, i e =0,f=0.1mhz 300 200 pf to-220 f 1.base 2.collector 3.emitter 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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